Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)

نویسندگان

چکیده

The main objective of our paper is to propose an approach studying the mechatronic system’s reliability through their high electron mobility transistors (HEMT). operating temperature one parameters that influences characteristics transistor, especially represents advantage over other transistor’s families. Several factors can influence this temperature. Thanks thermal modeling, it possible determine representing a great impact on temperature, such as power dissipation at active area transistor and reference above substrate. In study, these analytical methods, First Second Order Reliability Methods (FORM SORM, respectively), were used analyze HEMT reliability. coupling between two models—the model coded Matlab modeling with Comsol multiphysics software—the index failure probability studied system evaluated.

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ژورنال

عنوان ژورنال: Applied sciences

سال: 2021

ISSN: ['2076-3417']

DOI: https://doi.org/10.3390/app112210720